High Temperature Electronics Packaging

Survey Report of Current Status of High Temperature Micro devices Packaging

Wide band-gap semiconductor materials such silicon carbide (SiC), gallium nitride (GaN), and diamond (C) based electronic devices may operate at temperatures above the high temperature limit of silicon technology. Among these wide band gap materials, single crystal SiC is the most mature material at this stage. SiC has such excellent physical and chemical material properties that SiC microsyste...

Packaging Technologies for High Temperature Electronics and Sensors

This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500°C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-...

Experimental characterization of the mechanical behavior of two solder alloys for high temperature power electronics applications

Keywords: Power electronics High temperature Shear Creep Nano-indentation Hardening a b s t r a c t An experimental investigation of two potential candidate materials for the diamond die attachment is presented in this framework. These efforts are motivated by the need of developing a power electronic packaging for the diamond chip. The performance of the designed packaging relies particularly ...

3D SYSTEMS PACKAGING RESEARCH CENTER INDUSTRY CONSORTIUM IN SYSTEM SCALING FOR Computing and Communications Electronics Sensing Electronics for Autonomous Driving High-Power and High-Temperature Electronics for Electric Cars

Packaging Design & Manufacture of High Temperature Electronics Module for 225oC Applications utilizing Hybrid Microelectronics Technology

Many downhole instrumentation tools manufacture today utilizing organic material packaging technology for producing electronic modules. Such approach with organic PCB, standard packaged discrete semiconductor and SMT-type passive components has limited the device operating temperature range in 177oC area. An alternative packaging approach is to utilize Hybrid Microelectronics Technology to incr...

Packaging and Interconnection Technologies of Power Devices, Challenges and Future Trends

Standard packaging and interconnection technologies of power devices have difficulties meeting the increasing thermal demands of new application fields of power electronics devices. Main restrictions are the decreasing reliability of bond-wires and solder layers with increasing junction temperature. In the last few years intensive efforts have been invested in developing new packaging and inter...